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   Name              : Mehta Vishal        

  Email               : vrm2@njit.edu

  Research Advisor : Dr. N.M. Ravindra

 

  Academic Background :

 

     B.S. in Metallurgy at M.S. University (INDIA)

     M.S. in Material Science at NJIT (USA)

     Currently Pursuing Phd in Materials Science and Engineering

 

 Work Experience :

 

  1. M/S Birla Copper. Bharuch, Gujarat state, India. (4 years) Process Engineer

     involved in the daily smelting activities in custom based Copper smelter plant.

 

  2. M/S Keystone Valves (I) Pvt Ltd. Halol, Gujarat state, India. (One year)

   Q. A. Engineer in charge of functional testing (as per ANSI B16.5B) and

   certifications of valves as well as meeting monthly dispatch targets.

 

 Research Interests:

 

  Electrical and Optical properties of Semiconductor Materials and structures

 

 Current Research Work :  

                                 Currently, he is working on the selection of metals for

  silicon  metallization. As the device size decreases metallization becomes an

  issue in ULSI circuit fabrication industry. I am at present involved in setting up

  of Electrochemical workstation for electrodeposition of metal. Electrodeposition

  is an advantageous technique because it involves low temperature and low

  cost.

 

                                     

 

 

Fig. (a) Vishal working on Probe Station apparatus in Research Lab, in Tieran Hall.

 

  

                   

        Fig. (b) Probe Station is used for Resistivity     Fig. (c)  Research Prototype of 3 Zone

                  and Sheet Resistance measurement               Rapid Thermal  Processor (RTP).

 

 For more information related to project contact Dr. Ravindra or Vishal.

 

 Previous Research Work Experience :

                                          Electrical properties of ultra thin Al2O3 and HfO2

 films as gate dielectrics in MOS technology.

 

 Publications :

 

 1. Nuggehalli M. Ravindra, Krshna N. Ravindra, Markus Rabus, Vishal R. Mehta,

 Stephen E. Rubin, Sudhakar Shet and Anthony T. Fiory, “Applications of Spectral

 Emissometry,” Materials Science and Technology Conference Sept. 26- 28,2005

 

 2. Ravindra, N.M. Mehta, V.R., Shet, S.Silicon nanoelectronics and beyond: An

  overview and recent developments” Journal of Materials, Volume 57, Issue 6,

  June 2005, Pages 16-20.

 

 3. Mehta, V.R., Shet, S. , Ravindra, N.M. , Fiory, A.T. , Lepselter, M.P.Silicon-

  integrated uncooled infrared detectors: Perspectives on thin films and

  microstructures”, Journal of  Electronic Materials, Volume 34, Issue 5, May 2005,

  Pages 484-490.

 

4. Shet, S., Mehta, V.R. , Fiory, A.T. , Lepselter, M.P. , Ravindra, N.M. Macro

  self-assembly techniques”, Journal of Materials Volume 56, Issue 11, November

  2004, Page 300.

 

5. Ravindra, N.M., Fiory, A.T., Rubin, S., Shet, S., Mehta, V.R., Srivatsa, S.,

  “Temperature dependent infrared properties of InP, AIN and Al2O3”, Journal of

  Materials Volume 56,  Issue 11, November 2004, Page 22

 

6. Shet, S., Mehta, V.R. , Fiory, A.T. , Lepselter, M.P., Ravindra, N.M., “The

  magnetic field- assisted assembly of nanoscale semiconductor devices: A new

 technique”, Journal of  Materials Volume 56,Issue 10,October 2004, Pages 32-34.

 

7. Mehta, V.R., Fiory, A.T. , Ravindra, N.M. , Ho, M.Y. , Wilk, G.D. , Sorsch, T.W.,

  “Flat-band voltage study of atomic-layer-deposited aluminum-oxide subjected

  to spike thermal annealing,” Materials Research Society Symposium -

  Proceedings Volume 765, 2003, Pages 109-113 

 

8. Ravindra, N.M., Jin, L., Ivanov, D., Mehta, V.R., Dieng, L.M., Popov, G., Gokce,

  O.H., Grow, J., Fiory, A.T., “Electrical and compositional properties of TaSi2 

 films,” Journal of Electronic Materials Volume 31, Issue 10 SPEC., Oct. 2002,

 Pages 1074- 1079 

 

9. Fiory, A.T., Chawda, S.G., Madishetty, S., Mehta, V.R., Ravindra, N.M.,

  McCoy, S.P.,Lefrançois, M.E., Bourdelle, K.K., McKinley, J.M., Gossmann, H.-J.L.,

  Agarwal, A., “Transient-enhanced diffusion in shallow-junction formation,”

  Journal of Electronic Materials Volume 31, Issue 10 SPEC., October 2002, Pages

  999-1003

 

10. Fiory, A.T.; Chawda, S.G.; Madishetty, S.; Mehta, V.R.; Ravindra, N.M.; McCoy, S.P.;Lefrancois, M.E.; Bourdelle, K.K.; McKinley, J.M.; Gossmann, H.-J.L.; Agarwal, A., “Rapid thermal activation and diffusion of boron and phosphorus implants,” Advanced Thermal Processing of Semiconductors 9th International Conference on RTP 2001 25-29 Sept.  2001 Page(s):227 - 231

 

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  Spectral Emissometer

 used for simulataneous

 reflectance,transmittance

 , emmitance and temp.

 measurements.

 

 

 

 

 

   

 Materials Science and Engineering  Program,

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